Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1998, Pages 87-91

  Chen, Yuan ^a   Suehle, John S ^a   Shen, Chih Chieh ^a   Bernstein, Joseph ^a   Messick, Cleston ^a   Chaparala, Prasad ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); ULTRATHIN GATE OXIDES;

SEMICONDUCTOR DEVICE TESTING;

EID: 0031649738     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)