Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 79-83

  Kaczer, B ^a   De Keersgieter, A ^a   Mahmood, S ^b   Degraeve, R ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

RELIABILITY;

ELECTRICAL EFFECTS; GATE OXIDE; GATE OXIDE BREAKDOWN; INTRINSIC NATURE; INTRINSIC PARAMETERS; SOFT GATE; VOLTAGE STRESS;

GATES (TRANSISTOR);

EID: 15744364960     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315305     Document Type: Conference Paper

References (18)

1. J. H. Stathis, "Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits", IEEE T. Dev. and Materials Reliab. 1, pp. 43-59,2001.
2. M. A. Alam, B. E. Weir, P. J. Siverman, Y. Ma, and D. Hwang, "The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown", IEDM Tech. Dig., pp. 529-533, 2000.
3. J. Sune, E. Y. Wu, D. Jimenez, R. P. Vollertsen, and E. Miranda, "Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway", IEDM Tech. Dig., pp. 117-120, 2001.
4. J. Sune and E. Wu, "Statistics of successive breakdown events in gate oxides", IEEE Electron Dev, Lett. 14, pp. 272-274, 2003.
5. M. A. Alam, R. K. Smith, B. E Weir, and P. J. Silverman, "Uncorrelated breakdown of integrated circuits". Nature 420, p. 378, 2002.
6. F. Monsieur, E. Vincent, G. Ribes, V. Huard, S. Bruyere, D. Roy, G. Pananakakis, and G. Ghibaudo, "Wear-out, breakdown occurrence and failure detection in 18-25 angstrom ultrathin oxides", IRPS Proc, pp. 424-431, 2003.
7. B. P. Linder, J. H. Stathis, D. J. Frank, S. Lombardo, and A. Vayshenker, "Growth and scaling of oxide conduction after breakdown", IRPS Proc, pp. 402-405,2003.
8. T. Pompl, H. Wurzer, M". Kerbcr, R. C. W. Wilkins, and I. Eisele, "Influence of soft breakdown on nMOSFET device characteristics", Proc. IRPS, pp. 82-87, 1999.
9. [91 B. E. Weir, P. J. Silverman, M. A. Alam, F. Baumann, D. Monroe, A. Ghetti, 1. D. Bude, G. L. Timp, A. Hamad, T. M. Obetdick, N. X. Zhao, Y. Ma, M. M. Brown, D. Hwang, T. W. Sorsch, and J. Madic, "Gate oxides in 50um devices; thickness uniformity improves projected reliability", IEDM Tech. Dig., pp. 437-440,1999
10. W. K. Henson, N. Yang, and J. J. Wortman, "Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide riMOSFETV's".IEEE Electron Dev. Lett. 20, pp. 605-607, 1999.
11. B. Kaozer, R. Degraeve, A. De Kecrsgietcr, K. Van de Mieroop, V. Simons, and G. Groeseneken, "Consistent model for short-channel nMOSFET after hard gate oxide breakdown", IEEE T. Electron Dev., pp. 507-513, 2002.
12. R. Rodriguez, J.H. Stathis, and B. P. Linder, "Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters", Proc. IRPS, pp. 11-16, 2003.
13. B. Kaczer, R. Degraeve, E. Augendre, M. Jurczak, and G. Groeseneken, "Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns", ESSDERC Proc, pp. 75-78, 2003.
14. A. Cester, S. Cimino, A. Paccagnella, G, Ghidini, and G. Guegan, "Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L", Proc. IRPS, pp. 189-195,2003.
15. A. Cester, L. Bandiera, S. Cimino, A. Paccagnella, and G. Ghidini, "Incidence of oxide and interface degradation on MOSFET performance", INFOS 2003.
16. R. Rodriguez, J. H. Stathis, B. P. Linder, S. Kowalczyk, C. T. Chuang, R. V. Joshi, G. Northrop, K. Bernstein, A. J. Bhavnagarwala, and S. Lombardo, "The impact of gate-oxide breakdown on SRAM stability", IEEE Electron Dev. Lett. 23, pp. 559-561, 2002.
17. K.L Pey, C.R Tung, M.K. Radhakrishnan, L.J. Tang, and W.H. Lin, "DBIE shape and hardness dependence o gate oxide breakdown location in MOSFET channel", Proc. IRPS, pp. 584-585, 2003.
18. B. Kaczer, R. Degraeve, A, De Keersgieter, G. Groeseneken, and F. Crupi, "Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location" ESSDERC Proc, pp. 139-142, 2002.