Effect of dopants on chemical mechanical polishing of silicon

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 149-155

  Forsberg, M ^a   Keskitalo, N ^b   Olsson, J ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

Boron; Chemical mechanical polishing; Orientation; Phosphorus; Silicon

Indexed keywords

BORON; CHEMICAL MECHANICAL POLISHING; CRYSTAL ORIENTATION; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

SINGLE CRYSTALLINE SILICON (SCS);

MICROELECTRONIC PROCESSING;

EID: 0036132709     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00591-3     Document Type: Conference Paper

References (11)

1. Shallow and deep trench isolation for use in RF-bipolar IC:s
2. Polished TFTs: Surface roughness reduction and its correlation to device performance improvement
3. Investigations in polysilicon CMP to apply in subquarter micron DRAM device
4. Application of selective epitaxial silicon and chemo-mechanical polishing to bipolar transistors
5. Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
6. Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth
7. Silicon-on-insulator by wafer bonding: A review
8. Impact of chemomechanical polishing on the chemical composition and morphology of the silicon surface
9. Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon
10. Anisotropic etching of crystalline silicon in alkaline solutions. I. Orientation dependence and behavior of passivation layers
11. Anisotropic etching of crystalline silicon in alkaline solutions. II. Influence of dopants