High resolution studies of crystalline damage induced by lapping and single-point diamond machining of Si(100)

Journal of Materials Research

Volumn 11, Issue 5, 1996, Pages 1228-1237

  Kunz, R R ^a   Clark, H R ^a   Nitishin, P M ^a   Rothschild, M ^a   Ahern, B S ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; DIAMOND CUTTING TOOLS; DUCTILITY; MACHINING; PLASTICITY; POLISHING; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINA GRIT; OPTICAL PROFILOMETRY; SINGLE POINT DIAMOND MACHINING; SUBSURFACE DAMAGE; SURFACE ROOT MEAN SQUARE ROUGHNESS;

SILICON WAFERS;

EID: 0030151697     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0157     Document Type: Article

References (9)

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