Investigation of pad deformation and conditioning during the CMP of silicon dioxide films

Journal of Electronic Materials

Volumn 25, Issue 10, 1996, Pages 1628-1632

  Achuthan, K ^a   Curry, J ^b   Lacy, M ^b   Campbell, D ^c   Babu, S V ^a,c  

^a Clarkson University   (United States)

^b Strasbaugh   (United States)

^c CLARKSON UNIVERSITY   (United States)

Author keywords

Chemical mechanical polishing; Oxide films

Indexed keywords

EID: 5344262413     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655587     Document Type: Article

References (3)

1. I. Ali, S.R. Roy and G. Shinn, Solid State Tech. Oct., (1994).
2. P.L. Flaitz and M. Neisser, American Ceramic Soc. Bulletin 73 (5), (1994).
3. R. Bajaj and M. Desai, Mater. Res. Soc. Symp. Proc. 337, (Pittsburgh, PA: Mater. Res. Soc., 1994).