Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 218-220

  Yang, Wen Luh ^a   Cheng, Chih Yuan ^a   Tsai, Ming Shih ^b   Liu, Don Gey ^a   Shieh, Ming Sun ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BONDING; CRYSTALLINE MATERIALS; HYDROLYSIS; IMPURITIES; POLISHING; REMOVAL; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SOLUTIONS;

CHEMICAL MECHANICAL POLISH; PLANARIZATION PROCESS; POLYSILICON; SEMICONDUCTOR IMPURITIES; SEMICONDUCTOR PROCESS MODELING;

SEMICONDUCTOR DOPING;

EID: 0033748939     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841301     Document Type: Article

References (7)

1. C. Y. Chang and S. M. Sze, ULSI Technology, New York: McGraw-Hill, 1996, ch. 8.
2. M. Nandakumar et al., "Shallow trench isolation for advanced ULSI CMOS technologies," in IEDM Tech. Dig., 1998, pp. 133-136.
3. C. Y. Chang, H. Y. Lin, and T. F. Lei, "Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films," IEEE Electron Device Lett., vol. 17, pp. 100-102, Mar. 1996.
4. A. B. Y. Chan, C. T. Nguyen, and P. K. Ko, "Polished TFT's: Surface roughness reduction and its correlation to device performance improvement," IEEE Trans. Electron Devices, vol. 44, pp. 455-463, 1997.
5. T. F. Lei, J. Y. Cheng, S. Y. Shiau, T. S. Chao, and C. S. Lai, "Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films," IEEE Trans. Electron Devices, vol. 45, pp. 912-917, Apr. 1998.
6. J. R. Senna and R. L. Smith, "Gallium doping for silicon etch stop in KOH," in Proc. 8th Int. Conf. Solid-State Sensors and Actuators and EUROSENSORS IX, Stockholm, Sweden, 1995, pp. 194-197.
7. G. J. Pietsch, Y. J. Chabal, and G. S. Higashi, "The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111)," Surf. Sci., vol. 331-333, pp. 395-401, 1995.