Characteristics of SrTiO3 thin films deposited under various oxygen partial pressures

Journal of Materials Science

Volumn 31, Issue 16, 1996, Pages 4357-4362

  Paek, S H ^a   Won, J H ^a   Jang, J E ^a   Hwang, Y S ^a   Mah, J P ^b   Choi, J S ^c   Ahn, S T ^c   Lee, J G ^c   Park, C S ^d  

^a Hanyang University   (South Korea)

^b Honam University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Hanseo University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLIZATION; FERROELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; POLYCRYSTALS; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

CAPACITANCE VOLTAGE CURVE; OXYGEN PARTIAL PRESSURE; POST ANNEALING TEMPERATURE; RADIO FREQUENCY MAGNETRON SPUTTERING; SPUTTERING GAS; STRONTIUM TITANATE THIN FILMS; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 0030212335     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00356460     Document Type: Article

References (6)

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