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Volumn 118, Issue 1-3, 2005, Pages 192-196

Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates

Author keywords

Dielectric; High k; MOCVD; Praseodymium oxide; Thermal stability

Indexed keywords

ANNEALING; ARGON; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRON DIFFRACTION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRASEODYMIUM COMPOUNDS; SILICON; STOICHIOMETRY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 15344347365     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.027     Document Type: Conference Paper
Times cited : (5)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.