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Volumn 118, Issue 1-3, 2005, Pages 192-196
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Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates
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Author keywords
Dielectric; High k; MOCVD; Praseodymium oxide; Thermal stability
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Indexed keywords
ANNEALING;
ARGON;
CMOS INTEGRATED CIRCUITS;
CRYSTALLIZATION;
DIELECTRIC MATERIALS;
ELECTRON DIFFRACTION;
FILM GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PRASEODYMIUM COMPOUNDS;
SILICON;
STOICHIOMETRY;
THERMAL EFFECTS;
THERMODYNAMIC STABILITY;
TRANSMISSION ELECTRON MICROSCOPY;
HIGH K;
PRASEODYMIUM OXIDE;
SILICON SUBSTRATES;
THERMAL ANNEALING;
THIN FILMS;
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EID: 15344347365
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2004.12.027 Document Type: Conference Paper |
Times cited : (5)
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References (23)
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