Study of the thermal properties of Pr(III) precursors and their implementation in the MOCVD growth of praseodymium oxide films

Journal of the Electrochemical Society

Volumn 151, Issue 9, 2004, Pages

  Lo Nigro, Raffaella ^a   Toro, Roberta G ^b   Malandrino, Graziella ^b   Fragalà, Ignazio L ^b   Rossi, Patrizia ^c   Dapporto, Paolo ^c  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c Dipartimento di Energetica   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPLEXATION; CRYSTALLIZATION; FLUORINE CONTAINING POLYMERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON; STOICHIOMETRY; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

EQUIVALENT OXIDE THICKNESS (EOT); GREEN CRYSTALS; MASS TRANSPORT; SPHERICAL GRAINS;

PRASEODYMIUM;

EID: 4944246531     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1779336     Document Type: Article

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