Growth and characterization of InN on sapphire substrate by RF-MBE

Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 401-406

  Xiao, Hongling ^a   Wang, Xiaoliang ^a   Wang, Junxi ^a   Zhang, Nanhong ^a   Liu, Hongxin ^a   Zeng, Yiping ^a   Li, Jinmin ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Photoluminescence; A1. RF MBE; A1. X ray diffraction; B1. InN

Indexed keywords

CRYSTALLINITY; ELECTRON DRIFT VELOCITY; HIGH FREQUENCY ELECTRONIC DEVICES; HIGH PURITY NITROGEN GAS;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; HALL EFFECT; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR GROWTH;

EID: 15344341463     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.001     Document Type: Article

References (21)

1. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki J. Appl. Phys. 85 1999 7682
2. Motlan, E.M. Goldys, and T.L. Tansley J. Crystal Growth. 241 2002 165
3. H. Lu, W.J. Schaff, J. Hwang, H. Wu, G. Koley, and L.F. Eastman Appl. Phys. Lett. 79 2001 1489
4. J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Auger III, E.E. Haller, H. Lu, and W.J. Schaff Phys. Rev. B 66 2002 201403
5. B.E. Fortz, S.K. O' Leary, M.S. Shur, and L.F. Eastman J. Appl. Phys. 85 1999 7727
6. S.N. Mohammad, and H. Morcoc Prog. Quantum Electron. 20 1996 361
7. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Auger III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi Appl. Phys. Lett. 80 2002 3967
8. V. Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul Phys. Status Solidi (B) 229 2002 R1
9. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto Appl. Phys. Lett. 81 2002 1246
10. O. Ambacher, M.S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R.A. Fisher, A. Miehr, A. Bergmaier, and G. Dollinger J. Vac. Sci. Technol. B 14 1996 3532
11. Yoshiki Saito, Nobuaki Teraguchi, Akira Suzuki, Tsutomu Araki, and Yasushi Nanishi Jpn. J. Appl. Phys, Part 2 40 2001 L91
12. W.-K. Chen, Y.-C. Pan, H.-C. Kin, J. Ou, W.-H. Chen, and M.-C. Lee Jpn. J. Appl. Phys, Part 2 36 1999 L1625
13. Q.-X. Guo, T. Yamamura, A. Yoshida, and N. Itoh J.Appl.Phys. 75 1994 4927
14. A.G. Bhuiyan, A. Hashimoto, and A. Yamamoto J.Appl.Phys. 94 2003 2779
15. R. Juzaa, and H. Hahn Z. Anorg. Allg. Chem. 239 1938 282
16. S. Strite, D. Chandrasekhar, D.J. Smith, J. Sariel, H. Chen, and N. Teraguchi J. Crystal Growth 127 1993 204
17. G. Gieseke Semicond. Semimet. 2 1966 63
18. K. Osamaura, S. Naka, and Y. Murakami J. Appl. Phys. 46 1975 3432
19. T.L. Tansley, and C.P. Foley J. Appl. Phys. 59 1986 3241
20. A. Wakahara, and A. Yoshida Appl. Phys. Lett. 54 1989 2984
21. D.C. Look, H. Lu, W.J. Schaff, J. Jasinski, and Z. Liliental-Weber Appl. Phys. Lett. 80 2002 258