Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 12 B, 1997, Pages

  Chen, Wei Kuo ^a   Pan, Yung Chung ^a   Lin, Heng Ching ^a   Ou, Jehn ^a   Chen, Wen Hsiung ^a   Lee, Ming Chih ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES;

TRIMETHYLINDIUM; X RAY CHARACTERIZATION; X RAY DIFFRACTION SPECTRUM;

FILM GROWTH;

EID: 0031367958     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1625     Document Type: Article

References (20)