Reactive ion etching and characterization of p-silk ultra low-k film

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 1, 2005, Pages 174-181

  Murthy, B Ramana ^a   Mukherjee Roy, Moitreyee ^a   Krishnamoorthy, Ahila ^a   Frye, Don C ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b DOW CHEMICAL COMPANY   (United States)

Author keywords

P SiLK; Plasma etch characterization; Spin on ultra low k; Trench etching

Indexed keywords

P-SILK; PLASMA ETCH CHARACTERIZATION; SPIN-ON ULTRA LOW-K MATERIALS; TRENCH ETCHING;

AROMATIC POLYMERS; CHEMICAL MECHANICAL POLISHING; ELECTRIC BREAKDOWN; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASKS; PERMITTIVITY; PHOTORESISTS; PLASMA ETCHING; REACTIVE ION ETCHING; SURFACE ROUGHNESS; SURFACE STRUCTURE; THICKNESS MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 13844255100     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.840537     Document Type: Article

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