A new class of insulating materials: Emergence of ultralow-k

Solid State Technology

Volumn 44, Issue 9 SUPPL., 2001, Pages

  Bremmer, J N ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELASTIC MODULI; FRACTURE TOUGHNESS; INTEGRATED CIRCUIT MANUFACTURE; ORGANIC COMPOUNDS; PERMITTIVITY; POROSITY; SILICA; STRUCTURE (COMPOSITION);

INTEGRATED CIRCUIT TECHNOLOGY; POROUS STRUCTURES; ULTRALOW PERMITTIVITY;

ELECTRIC INSULATING MATERIALS;

EID: 0035448531     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (14)

1. Low-k dielectrics get respectable
2. The global outlook for dielectric materials in semiconductor devices, 1999-2004
3. Correlations between structural characteristics and process conditions of HSQ-based porous low-k thin films
4. Low-k dielectrics characterization for damascene integration
5. Mechanical integrity drives low-k choices
6. Supramolecular approaches to nanoscale dielectric foams for adv.microelec.devices
7. Industry divided on low-k dielectric choices
8. Studies on XLK film characterization and integration in copper damascene processes
9. Single and dual damascene integration of a spin-on ultralow-k materials
10. Physical and electrical characterization of silsesquioxane based ultra-low-k dielectric films
11. Dual hard mask process for low-k porous organosilica dielectric in copper dual damascene interconnect fabrication
12. Nanoglass E copper damascene process for etch, clean, and CMP
13. Integration feasibility of porous SiLK semiconductor dielectric
14. Ultralow-k porous silicon dioxide films from a plasma process