Dependence of leakage mechanisms on dielectric barrier in Cu-SiOC damascene interconnects

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2316-2318

  Ngwan, V C ^a   Zhu, Chunxiang ^a   Krishnamoorthy, Ahila ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; ETCHING; LEAKAGE CURRENTS; MOS DEVICES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON COMPOUNDS;

CHEMICAL MECHANICAL PLANARIZATION (CMP); DAMASCENE STRUCTURES; DIFFUSION BARRIERS; ENERGY BARRIERS; SCHOTTKY EMISSIONS (SE);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 2142761615     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1688978     Document Type: Article

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