Carrier recombination processes in MOVPE and MBE grown 1.3 μ m GaInNAs edge emitting lasers

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 501-506

  Fehse, R ^a   Adams, A R ^a   Sweeney, S J ^a   Tomic, S ^a   Riechert, H ^b   Ramakrishnan, A ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION;

CARRIER RECOMBINATION; EDGE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0037343548     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00403-3     Document Type: Conference Paper

References (17)

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