Theoretical study of the temperature dependence of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 12, 1996, Pages 2133-2138

  Pan, Jen Wei ^b,c   Chyi, Jen Inn ^a,b,d,e,f  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c CENTRAL UNIVERSITY   (Ghana)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^e UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^f Phi Tau Phi ^*

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; GAIN MEASUREMENT; LEAKAGE CURRENTS; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

AUGER CURRENT DENSITY; LEAKAGE CURRENT DENSITY; THRESHOLD CURRENT DENSITY; TRANSPARENCY CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0030384760     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.544760     Document Type: Article

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