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Volumn 32, Issue 12, 1996, Pages 2133-2138

Theoretical study of the temperature dependence of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; GAIN MEASUREMENT; LEAKAGE CURRENTS; QUANTUM ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 0030384760     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.544760     Document Type: Article
Times cited : (57)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.