Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2743-2745

  Andreev, Aleksey D ^a,b   Donetsky, Dmitry V ^a  

^a Stony Brook University   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON ABSORPTION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

AUGER RECOMBINATION; INTERBAND ABSORPTION; THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0032607350     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124000     Document Type: Article

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