Evaluation of differential gain of 1.3 μm AlGaInAs/InP strained MQW lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 729-732

  Ishikawa, T ^a   Higashi, T ^a   Uchida, T ^a   Fujii, T ^a   Yamamoto, T ^a   Shoji, H ^a   Kobayashi, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; FABRICATION; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

DIFFERENTIAL GAIN; RELAXATION OSCILLATION FREQUENCY; RIDGE WAVEGUIDE STRUCTURE;

QUANTUM WELL LASERS;

EID: 0032287454     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)