Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 53-57

  Liu, J P ^a   Jin, R Q ^a   Zhu, J J ^a   Zhang, J C ^a   Wang, J F ^a   Wu, M ^a   Chen, J ^a   Wang, Y T ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. High resolution X ray diffraction; A3. Metalorganic vapor phase epitaxy; A3. Multiple quantum wells; B1. Nitrides

Indexed keywords

COMPUTER SIMULATION; ELECTROLUMINESCENCE; ENTHALPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

FLOW RATES; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); SURFACE SEGREGATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1342306679     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.049     Document Type: Article

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