Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Solid State Communications

Volumn 116, Issue 12, 2000, Pages 675-678

  Ryu, M Y ^a   Yu, Y J ^a   Shin, E J ^b   Yu, P W ^a   Lee, J I ^b   Yu, S K ^b   Oh, E S ^c   Nam, O H ^c   Sone, C S ^c   Park, Y J ^c   Kim, T I ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSITIONS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034324229     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00410-5     Document Type: Article

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