The characteristic of HfO2 on strained SiGe

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 209-213

  Chen, T C ^a   Lee, L S ^b   Lai, W Z ^a   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Annealing temperature; Compressively strained SiGe; HfO2

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC CHARGE; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXYGEN; SEMICONDUCTING GERMANIUM;

ANNEALING TEMPERATURE; COMPRESSIVELY STRAINED SIGE; HFO2; POST-DEPOSITION ANNEALING (PDA);

SEMICONDUCTING SILICON;

EID: 13244255685     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.041     Document Type: Conference Paper

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