High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's

IEEE Electron Device Letters

Volumn 12, Issue 8, 1991, Pages 447-449

  Verdonckt Vandebroek, Sophie ^a   Crabbé, Emmanuel F ^a   Meyerson, Bernard S ^a   Harame, David L ^a   Restie, Phillip J ^a   Stork, Johannes M C ^a   Megdanis, Andrew C ^a   Stanis, Carol L ^a   Bright, Arthur A ^a   Kroesen, Gerrit M W ^a   Kroesen, Alan C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON - APPLICATIONS; SEMICONDUCTING GERMANIUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS - APPLICATIONS;

CHANNEL MOBILITY; GRADED CHANNEL MOSFET; MODULATION DOPING; P-MOSFET'S; TRANSCONDUCTANCE MINIMIZATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026204002     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119161     Document Type: Article

References (9)

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