Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Applied Physics Letters

Volumn 83, Issue 13, 2003, Pages 2611-2613

  Jang, Moongyu ^a   Oh, Jihun ^a   Maeng, Sunglyul ^a   Cho, Wonju ^a   Lee, Seongjae ^a   Kang, Kicheon ^b   Park, Kyoungwan ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chonnam National University   (South Korea)

^c University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ERBIUM;

DRAIN VOLTAGE;

TRANSISTORS;

EID: 0142120597     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1614441     Document Type: Article

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