Physics and applications of the Schottky junction transistor

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2421-2427

  Thornton, T J ^a  

^a Arizona State University   (United States)

Author keywords

Metal semiconductor field effect transistors (MESFETs); Schottky barriers; Semiconductor device modeling

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; ULSI CIRCUITS;

MICROPOWER ANALOG CIRCUITS; SCHOTTKY JUNCTION TRANSISTOR;

GATES (TRANSISTOR);

EID: 0035471662     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954487     Document Type: Article

References (18)

1. The Schottky junction transistor - Micropower circuits at GHz frequencies
2. A diffusion model of sub-threshold current for GaAs MESFETs
3. Subthreshold current in submicron AlGaAs/GaAs MODFETs
4. One micrometer scale self-aligned cobalt disilicide Schottky barrier diodes
5. 2/n-S(100) formed by solid phase epitaxy
6. Extraction of the oxide charges at the silicon substrate interface in silicon-on-insulator MOSFETS
7. SOI material properties determined by electrical characterization
8. Electrical evaluation of SIMOX material and integrated devices
9. Thermal behavior of residual strain in SOI bonded wafer and effects on electron mobility
10. Micropower techniques
11. Carrier mobilities at weakly inverted silicon surfaces
12. Micropower log-domain-filter for electronic cochlea
13. A design framework for low power analog filter banks
14. Progress toward 10 nm CMOS devices