25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on separation-by-implanted-oxygen substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 8, 2000, Pages 4757-4758

  Itoh, Atsushi ^a   Saitoh, Masayuki ^a   Asada, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ION IMPLANTATION; OXYGEN; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSCONDUCTANCE;

SEPARATION BY IMPLANTED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0034245187     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4757     Document Type: Article

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