Simulation of Schottky barrier tunnel transistor using simple boundary condition

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2718-2720

  Jang, Moongyu ^a   Kang, Kicheon ^a   Lee, Seongjae ^a   Park, Kyoungwan ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; THRESHOLD VOLTAGE;

SCHOTTKY BARRIER TUNNEL TRANSISTORS;

TRANSISTORS;

EID: 0037545838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569415     Document Type: Article

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