New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2795-2798

  Rishton, S A ^a,b   Ismail, K ^a   Chu, J O ^a   Chan, K K ^a   Lee, K Y ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Etec Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012072882     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589730     Document Type: Article

References (6)

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