Schottky source/drain SOI MOSFET with shallow doped extension

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2009-2013

  Nishisaka, Mika ^a   Matsumoto, Sumie ^a   Asano, Tanamasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Floating body effect; Sb doping; Schottky contact; Schottky MOSFET; Shallow doped extension; Silicon on insulator

Indexed keywords

ANTIMONY; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ION IMPLANTATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

DRAIN BRAINDOWN; FLOATING BODY EFFECT; SCHOTTKY SOURCE; SHALLOW DOPED EXTENSION;

MOSFET DEVICES;

EID: 0037672096     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2009     Document Type: Article

References (9)

1. J. R. Tucker, C. Wang and P. S. Carney: Appl. Phys. Lett. 65 (1994) 618.
2. M. Nishisaka and T. Asano: Jpn. J. Appl. Phys. 37 (1998) 1295.
3. A. Itoh, M. Saitoh and M. Asada: Jpn. J. Appl. Phys. 39 (2000) 4757.
4. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T.-J. King and C. Hu: IEEE Int. Electrons Device Meet. Tech. Dig. (2000) p. 57.
5. T. Asano, Y. Maeda, G. Nakagawa and Y. Arima: Jpn. J. Appl. Phys. 41 (2002) 2306.
6. M. Nishisaka, Y. Ochiai and T. Asano: 56th Ann. Device Research Conf. Dig., 1998, p. 74.
7. H. C. Lin, K. L. Yeh, R. G. Huang, C. Y. Lin and T. Y. Huang: IEEE Electron Device Lett. 22 (2001) 179.
8. M. Yoshimi, M. Terauchi, A. Nishiyama, O. Arisumi, A. Murakoshi, K. Matsuzawa, N. Shigyo, S. Takeno, M. Tomita, K. Suzuki, Y. Ushiku and H. Tango: IEEE Trans. Electron Device 44 (1997) 423.
9. T. Ohno, M. Takahashi, Y. Kado and T. Tsuchiya: IEEE Trans. Electron Device 45 (1998) 1071.