Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 6 A, 2002, Pages

  Lin, Horng Chih ^a,b   Wang, Meng Fan ^a,b   Hou, Fu Ju ^a,b   Liu, Jan Tsai ^a,b   Huang, Tiao Yuan ^a,b   Sze, Simon M ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ambipolar; Electrical junction; Schottky barrier; Silicide; Silicon on insulator (SOI)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON BEAM LITHOGRAPHY; LOW TEMPERATURE OPERATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILM TRANSISTORS;

AMBIPOLAR; ELECTRICAL JUNCTION; SEPARATION BY IMPLANTED OXYGEN; SILICIDE;

MOSFET DEVICES;

EID: 0036612750     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l626     Document Type: Letter

References (17)