Anomalous current transients related to defect discharge in irradiated silicon diodes

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-8

  Menichelli, David ^a   Scaringella, Monica ^a   Bruzzi, Mara ^a   Pintilie, Ioana ^b   Fretwurst, Eckhart ^c  

^a Department of Energetics ^*  (Italy)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; DENSITY; DIODE; ELECTRIC CURRENT; ENERGY YIELD; FIELD EMISSION; GAMMA RADIATION; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; MOLECULAR MODEL; SEMICONDUCTOR; SIMULATION; SPACE; SPECTROSCOPY; SURFACE CHARGE; THERMAL STIMULATION; THERMODYNAMICS;

EID: 12344324555     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.195209     Document Type: Article

References (35)

1. M. Jaros, Deep Levels in Semiconductors (Adam Hilger, Bristol, 1982).
2. M. Bruzzi, IEEE Trans. Nucl. Sci. 48, 960 (2000).
3. G. Lindstroem, Nucl. Instrum. Methods Phys. Res. A 512, 30 (2003).
4. D. Creanza, M. De Palma, V. Radicci, L. Schiavulli, K. I. Hinz, G. W. Rossberg, J. Kierstead, Z. Li, A. Cavallini, S. Lazanu, et al., RD50 Status Report 2002/2003, CERN-LHCC-2003-058, 2003.
5. R. Wunstorf, Nucl. Instrum. Methods Phys. Res. A 466, 327 (2001).
6. Z. Li, C. J. Li, and E. Verbitskaya, IEEE Trans. Nucl. Sci. 44, 834 (1997).
7. E. Fretwurst, V. Eremin, H. Feick, J. Gerhardt, Z. Li, and G. Lindström, Nucl. Instrum. Methods Phys. Res. A 338, 356 (1997); E. Verbitskaya, M. Abreu, P. Anbinderis, T. Anbinderis, N. D'Ambrosio, W. de Boer, E. Borchi, K. Borer, M. Bruzzi, S. Buontempo, et al., ibid. 514, 47 (2003).
8. E. Fretwurst, V. Eremin, H. Feick, J. Gerhardt, Z. Li, and G. Lindström, Nucl. Instrum. Methods Phys. Res. A 338, 356 (1997); E. Verbitskaya, M. Abreu, P. Anbinderis, T. Anbinderis, N. D'Ambrosio, W. de Boer, E. Borchi, K. Borer, M. Bruzzi, S. Buontempo, et al., ibid. 514, 47 (2003).
9. I. Pintilie, L. Pintilie, M. Moll, E. Fretwurst, and G. Lindstroem, Appl. Phys. Lett. 78, 550 (2001).
10. M. G. Buhler, Solid-State Electron. 15, 69 (1972).
11. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1992).
12. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
13. B. W. Wessels, J. Appl. Phys. 47, 1131 (1976).
14. C. H. Hurtes, M. Boulou, A. Mitonneau, and D. Bois, Appl. Phys. Lett. 32, 821 (1978).
15. A. C. Wang and C. T. Sah, J. Appl. Phys. 55, 565 (1984).
16. W. E. Phillips and J. R. Lowney, J. Appl. Phys. 54, 2786 (1983).
17. E. Rosencher, V. Mosser, and G. Vincent, Phys. Rev. B 29, 1135 (1984).
18. Z. Li, H. W. Kraner, E. Verbitskaya, V. Eremin, A. Ivanov, M. Rattaggi, P. G. Rancoita, F. A. Rubinelli, S. J. Fonash, C. Dale, and P. Marshall, IEEE Trans. Nucl. Sci. 39, 1730 (1992).
19. G. Lindström, M. Ahmed, S. Albergo, P. Allport, D. Anderson, L. Andricek, M. M. Angarano, V. Augelli, N. Bacchetta, P. Bartalini, et al., Nucl. Instrum. Methods Phys. Res. A 465, 60 (2001).
20. J. M. Trombetta and G. D. Watkins, Appl. Phys. Lett. 57, 1103 (1987).
21. M. Mamor, M. Willander, F. D. Auret, W. E. Meyer, and E. Sveinbjörnsson, Phys. Rev. B 63, 045201 (2001); A. Khan, M. Yamaguchi, T. Hisamatsu, and S. Matsuda, J. Appl. Phys. 87, 2162 (2000).
22. M. Mamor, M. Willander, F. D. Auret, W. E. Meyer, and E. Sveinbjörnsson, Phys. Rev. B 63, 045201 (2001); A. Khan, M. Yamaguchi, T. Hisamatsu, and S. Matsuda, J. Appl. Phys. 87, 2162 (2000).
23. A. Hallén, N. Keskitalo, F. Masszi, and V. Nágl, J. Appl. Phys. 79, 3906 (1996).
24. W. Shockley and W. T. Read, Jr., Phys. Rev. 87, 835 (1952).
25. R. Sonnenblick, N. Cartiglia, B. Hubbard, J. Leslie, H. F. W. Sadrozinski, and T. Schalk, Nucl. Instrum. Methods Phys. Res. A 310, 189 (1991); D. Husson, IEEE Trans. Nucl. Sci. 41, 811 (1994); Z. Li, D. Anderson, B. Barnett, R. Beuttenmueller, W. Chen, C. Y. Chien, V. Eremin, M. Frautschi, G. Grim, G. Hu, S. Kwan, D. Lander, S. Mani, S. U. Pandey, Q. Wang, S. Willard, and X. Xie, Nucl. Instrum. Methods Phys. Res. A 409, 180 (1998).
26. R. Sonnenblick, N. Cartiglia, B. Hubbard, J. Leslie, H. F. W. Sadrozinski, and T. Schalk, Nucl. Instrum. Methods Phys. Res. A 310, 189 (1991); D. Husson, IEEE Trans. Nucl. Sci. 41, 811 (1994); Z. Li, D. Anderson, B. Barnett, R. Beuttenmueller, W. Chen, C. Y. Chien, V. Eremin, M. Frautschi, G. Grim, G. Hu, S. Kwan, D. Lander, S. Mani, S. U. Pandey, Q. Wang, S. Willard, and X. Xie, Nucl. Instrum. Methods Phys. Res. A 409, 180 (1998).
27. R. Sonnenblick, N. Cartiglia, B. Hubbard, J. Leslie, H. F. W. Sadrozinski, and T. Schalk, Nucl. Instrum. Methods Phys. Res. A 310, 189 (1991); D. Husson, IEEE Trans. Nucl. Sci. 41, 811 (1994); Z. Li, D. Anderson, B. Barnett, R. Beuttenmueller, W. Chen, C. Y. Chien, V. Eremin, M. Frautschi, G. Grim, G. Hu, S. Kwan, D. Lander, S. Mani, S. U. Pandey, Q. Wang, S. Willard, and X. Xie, Nucl. Instrum. Methods Phys. Res. A 409, 180 (1998).
28. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
29. G. D. Watkins and J. W. Corbett, Phys. Rev. 138, A543 (1965).
30. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982).
31. M. Moll, H. Feick, E. Fretwurst, G. Lindström, and C. Schütze, Nucl. Instrum. Methods Phys. Res. A 388, 335 (1997).
32. I. Pintilie, E. Fretwurst, G. Lindstroem, and J. Stahl, Appl. Phys. Lett. 82, 2169 (2003).
33. I. Pintilie, E. Fretwurst, G. Lindström, and J. Stahl, Nucl. Instrum. Methods Phys. Res. A 514, 18 (2003).
34. Z. Li, C. J. Li, and E. Verbitskaya, IEEE Trans. Nucl. Sci. 44, 834 (1997), see Fig. 6.
35. E. Verbitskaya, V. Eremin, A. Ivanov, N. Strokan, V. Vasilev, A. Markov, A. Polyakov, V. Gravin, Y. Kozlova, E. Veretenkin, and T. J. Bowles, Nucl. Instrum. Methods Phys. Res. A 439, 634 (2000), see p. 644 and Fig. 4.