Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation

Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2162-2168

  Khan, Aurangzeb ^a   Yamaguchi, Masafumi ^a   Hisamatsu, Tadashi ^b   Matsuda, Sumio ^b  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001410906     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372156     Document Type: Article

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