Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 634-646

  Verbitskaya, E ^a   Eremin, V ^e   Ivanov, A ^a   Strokan, N ^a   Vasilev V ^a   Markov, A ^b   Polyakov, A ^b   Gavrin, V ^c   Kozlova, Yu ^c   Veretenkin, E ^c   Bowles, T J ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b Institute of Chemical Problems for Microelectronics   (Russian Federation)

^c INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ELECTRON TRAPS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR COUNTERS; STOICHIOMETRY; TRANSPORT PROPERTIES;

CHARGE COLLECTION EFFICIENCY; SOLAR NEUTRINO SPECTROSCOPY;

COSMIC RAY DETECTORS;

EID: 17644430219     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00853-0     Document Type: Article

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