The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 514, Issue 1-3, 2003, Pages 47-61

  Verbitskaya, E ^a   Abreu, M ^b   Anbinderis, P ^c   Anbinderis, T ^c   D'Ambrosio, N ^d   De Boer, W ^e   Borchi, E ^f   Borer, K ^g   Bruzzi, M ^f   Buontempo, S ^d   Casagrande, L ^h   Chen, W ⁱ   Cindro, V ^j   Dezillie, B ⁱ   Dierlamm, A ^e   Eremin, V ^a   Gaubas, E ^c   Gorbatenko, V ^c   Granata, V ^h,k   Grigoriev, E ^e,l,s   Grohmann, S ^h   Hauler, F ^e   Heijne, E ^h   Heising, S ^e   Hempel, O ^m   Herzog, R ^m   Harkonen J ⁿ   Ilyashenko, I ^a   Janos, S ^g   Jungermann, L ^e   Kalesinskas, V ^c   Kapturauskas, J ^c   Laiho, R ^o   Li, Z ⁱ   Mandic, I ^j   De Masi, Rita ^p   Menichelli, D ^f   Mikuz, M ^j   Militaru, O ^q   Niinikoski, T O ^h   O'Shea, V ^r   Pagano, S ^d   Palmieri, V G ^h   Paul, S ^p   Perea Solano, B ^h   Piotrzkowski, K ^q   Pirollo, S ^f   Pretzl, K ^g   Rato Mendes, P ^b   Ruggiero, G ^r   Smith, K ^r   Sonderegger, P ^h   Sousa, P ^b   Tuominen, E ⁿ   Vaitkus, J ^c   Da Via C ^k   Wobst, E ^m   Zavrtanik, M ^j   more..

^a IOFFE INSTITUTE   (Russian Federation)

^b LIP   (Portugal)

^c VILNIUS UNIVERSITY   (Lithuania)

^d UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^e UNIVERSITY OF KARLSRUHE   (Germany)

^f UNIVERSITY OF FLORENCE   (Italy)

^g UNIVERSITY OF BERN   (Switzerland)

^h CERN   (Switzerland)

ⁱ BROOKHAVEN NATIONAL LABORATORY   (United States)

^j JO EF STEFAN INSTITUTE   (Slovenia)

^k BRUNEL UNIVERSITY   (United Kingdom)

^l UNIVERSITY OF GENEVA   (Switzerland)

^m DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

ⁿ UNIVERSITY OF HELSINKI   (Finland)

^o UNIVERSITY OF TURKU   (Finland)

^p TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^q UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^r UNIVERSITY OF GLASGOW   (United Kingdom)

^s INSTITUTE FOR THEORETICAL AND EXPERIMENTAL PHYSICS   (Russian Federation)

more..

Author keywords

Carrier trapping; Charge collection efficiency; Electric field distribution; Radiation hardness; Silicon detectors

Indexed keywords

CHARGE CARRIERS; DETECTORS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; GAMMA RAYS; NEUTRON IRRADIATION; PROTON IRRADIATION; RADIATION HARDENING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

CHARGE COLLECTION EFFICIENCY (CCE);

SEMICONDUCTING SILICON;

EID: 0242523093     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.083     Document Type: Conference Paper

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