Study of bulk damage in high resistivity silicon detectors irradiated by high dose of60Co γ-radiation

IEEE Transactions on Nuclear Science

Volumn 44, Issue 3 PART 1, 1997, Pages 834-839

  Li, Z ^a   Li, C J ^a,b   Verbitskaya, E ^a,c  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005177328     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.603761     Document Type: Article

References (14)

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14. 60Co-gammas in High Resistivity Silicon Detectors Using Deep Level Transient Spectroscopy"; près. Int'l Conf. on Radiation Effects on Semiconductor Materials, Detectors, and Devices," Florence Italy, 6-8 March 1996; to be published in Nucl. Instr. & Meth.