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Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 7, 2003, Pages

Atom vacancy lines and surface patterning: The role of stress for Br-Si(100)-(2×1) at 700 K

(5) Xu, J a,b Graugnard, E a,b,c Trenhaile, R a,b Nakayama, Koji S a,b Weaver, H a,b

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

b University of Illinois at Urbana Champaign (United States)

c Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; DIMER; SILICON;

ARTICLE; ATOM; DYNAMICS; ENERGY; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; TEMPERATURE;

EID: 11244338419 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.68.075301 Document Type: Article

Times cited : (14)

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