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Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 24, 1999, Pages 15893-15901

Halogen etching of Si(100)-2×1: Dependence on surface concentration

(3) Nakayama, Koji a Aldao, C M b Weaver, J H a

a UNIVERSITY OF MINNESOTA (United States)

b UNIVERSIDAD NACIONAL DE MAR DEL PLATA (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000977267 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.59.15893 Document Type: Article

Times cited : (40)

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