Spontaneous Roughening: Fundamental Limits in Si(100) Halogen Etch Processing

Physical Review Letters

Volumn 89, Issue 9, 2002, Pages

  Herrmann, Cari F ^a   Chen, Dongxue ^a   Boland, John J ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; CHEMICAL BONDS; HALOGEN COMPOUNDS; HALOGENATION; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE ROUGHNESS; SURFACES; THERMODYNAMIC STABILITY;

SPONTANEOUS ROUGHENING;

ETCHING;

EID: 0037179363     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.096102     Document Type: Article

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