Atomically perfect bismuth lines on si(001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 23, 1999, Pages 14868-14871

  Sakamoto, K ^a   Owen, J H G ^b   Briggs, G A D ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001693542     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.14868     Document Type: Article

References (10)

1. A. A. Baski, J. Vac. Sci. Technol.A8, 245 (1990).
2. X. Deng, Phys. Rev. Lett.80, 1022 (1998).
3. The reason why we indicate the range of desorption temperature is that this phenomena takes place at low speed to allow the formation of the Bi line. The time required for the complete desorption of 1 ML Bi is 60 min at 823 K and 4 min at 873 K.
4. T. Jung, R. Schlittler, J K. Gimzewski, and F J. Himpsel, Appl. Phys. A: Mater. Sci. Process.61A, 467 (1995).
5. C. Park, Jpn. J. Appl. Phys. Part 232, L528 (1993).
6. Kunihiro Sakamoto, Jpn. J. Appl. Phys., Part 232, L204 (1993).
7. C. M. GoringeRep. Prog. Phys.60, 1447 (1997).
8. X. P. Li, Phys. Rev. B47, 10 891 (1993).
9. J.H.G. Owen, Surf. Sci.341, L1042 (1995).
10. N. Kitamura, Phys. Rev. Lett.71, 2082 (1993).