Stress relief as the driving force for self-assembled Bi nanolines

Physical Review Letters

Volumn 88, Issue 22, 2002, Pages 226104/1-226104/4

  Owen, J H G ^a   Miki, K ^b   Koh, H ^c   Yeom, H W ^c   Bowler, D R ^d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Yonsei University   (South Korea)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CALCULATIONS; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; STRESSES; SURFACE STRUCTURE;

ENERGETICALLY FAVORABLE STRUCTURE; SELF ASSEMBLED NANOLINES; SEMICONDUCTOR SURFACES; SURFACE STRESS;

NANOSTRUCTURED MATERIALS;

EID: 0037014120     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.88.226104     Document Type: Article

References (15)