SCOPUS 정보 검색 플랫폼

Volumn 87, Issue 11, 2001, Pages

Vacancy dynamics and reorganization on bromine-etched Si(100)-(2 × 1) surfaces

a University of North Carolina at Chapel Hill (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BROMINE; DIMERS; ETCHING; HIGH TEMPERATURE EFFECTS; MOLECULAR DYNAMICS; NUCLEATION; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY;

DIMER-VACANCY DYNAMICS; SINGLE-ATOM VACANCY DYNAMICS; VACANCY DYNAMICS; VARIABLE-TEMPERATURE SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 39249084001 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (12)

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