Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3185-3190

  Ball, Dennis R ^a   Schrimpf, Ron D ^a   Barnaby, Hugh J ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Arizona   (United States)

Author keywords

Bipolar; Displacement; Ionization; Proton; Radiation

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); IONIZATION; PROTON IRRADIATION; RADIATION DAMAGE;

DISPLACEMENT DAMAGES;

BIPOLAR TRANSISTORS;

EID: 0036952655     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805369     Document Type: Conference Paper

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