Negative bias temperature instabilities in SiO2/HfO 2-based hole channel FETs

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Houssa, M ^a   De Gendt, S ^a   Groeseneken, G ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRIC CHARGE; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOSFET DEVICES; STRESSES; THERMODYNAMIC STABILITY;

ELECTRICAL STRESS; GATE STACKS; HOLE CHANNEL FIELD EFFECT TRANSISTORS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

SILICA;

EID: 10844290920     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1815154     Document Type: Article

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