Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2872-2876

  Ang, C H ^a   Ling, C H ^a   Cheng, Z Y ^a   Cho, B J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; THRESHOLD VOLTAGE;

CARRIER SEPARATION; DIRECT TUNNELING CURRENTS; GATE VOLTAGES; HOLE CURRENT; SURFACE HOLES; TEMPERATURE SENSITIVE; TEMPERATURE SENSITIVITY; ULTRA THIN GATE OXIDE;

HOLE CONCENTRATION;

EID: 1642286057     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1288169     Document Type: Article

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