Si+ ion implanted MPS bulk GaN diodes

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 827-830

  Irokawa, Y ^a   Kim, J ^b   Ren, F ^b   Baik, K H ^b   Gila, B P ^b   Abernathy, C R ^b   Pearton, S J ^b   Pan, C C ^c   Chen, G T ^c   Chyi, J I ^c   Park, S S ^d  

^a Rd Management Section   (Japan)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; ION IMPLANTATION; LEAKAGE CURRENTS; METALLIZING; OPTIMIZATION; SCHOTTKY BARRIER DIODES;

ACTIVATION EFFICIENCY; DEPLETION REGION; DUAL-METAL TRENCH (DMT);

SEMICONDUCTOR DIODES;

EID: 10744223191     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.018     Document Type: Article

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