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Volumn 114-115, Issue SPEC. ISS., 2004, Pages 9-14

New physics mechanisms enabled by advanced SOI CMOS engineering

Author keywords

CMOS; GIFBE; Silicon on insulator (SOI)

Indexed keywords

ALUMINA; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FREQUENCIES; GATES (TRANSISTOR); MOSFET DEVICES; SILICON; SILICON ON INSULATOR TECHNOLOGY;

EID: 10644224356     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.017     Document Type: Conference Paper
Times cited : (15)

References (29)
  • 5
    • 2042487584 scopus 로고    scopus 로고
    • Semiconductor silicon 2002, Pennington, USA
    • H.R. Huff, L. Fabry, S. Kishino (Eds.)
    • S. Cristoloveanu, in: H.R. Huff, L. Fabry, S. Kishino (Eds.), Semiconductor Silicon 2002, Pennington, USA, Electrochem, Soc. Proc. PV-2002-2 (2002) 328.
    • (2002) Electrochem, Soc. Proc. , vol.PV-2002-2 , pp. 328
    • Cristoloveanu, S.1
  • 7
    • 0442314936 scopus 로고    scopus 로고
    • Silicon nitride and silicon dioxide thin insulating films VII, Pennington, USA
    • R.E. Sah, M.J. Dean, D. Landheer, K.B. Sundaram, W.D. Brown, D. Misra (Eds.)
    • J. Pretet, A. Ohata, F. Dieudonné, F. Allibert, N. Bresson, T. Matsumoto, T. Poiroux, J. Jomaah, S. Cristoloveanu, in: R.E. Sah, M.J. Dean, D. Landheer, K.B. Sundaram, W.D. Brown, D. Misra (Eds.), Silicon Nitride and Silicon Dioxide Thin Insulating Films VII, Pennington, USA, Electrochem. Soc. Proc., vol. PV-2003-02, 2003, pp. 476-487.
    • (2003) Electrochem. Soc. Proc. , vol.PV-2003-02 , pp. 476-487
    • Pretet, J.1    Ohata, A.2    Dieudonné, F.3    Allibert, F.4    Bresson, N.5    Matsumoto, T.6    Poiroux, T.7    Jomaah, J.8    Cristoloveanu, S.9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.