Effect of high-pressure oxygen annealing on Bi2SiO5-added ferroelectric thin films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 B, 2002, Pages

  Kijima, Takeshi ^a,b   Kawashima, Yoshihito ^b   Idemoto, Yasushi ^c   Ishiwara, Hiroshi ^b  

^a Res Dev Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi2SiO5; Bismuth silicate; Chemical solution deposition method; Ferroelectric; High pressure oxygen

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTALLIZATION; DEPOSITION; LEAKAGE CURRENTS; OXYGEN; SOL-GELS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

BISMUTH SILICATE; CHEMICAL SOLUTION DEPOSITION; HIGH PRESSURE OXYGEN;

FERROELECTRIC THIN FILMS;

EID: 0037110150     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1164     Document Type: Article

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