Effect of cosubstitution of la and v in Bi4Ti3O 12 thin films on the low-temperature deposition

Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 100-102

  Watanabe, Takayuki ^a   Funakubo, Hiroshi ^a   Osada, Minoru ^a   Noguchi, Yuji ^b   Miyayama, Masaru ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COERCIVE FIELD; COSUBSTITUTION; DEPOSITION TEMPERATURES; FATIGUE ENDURANCES; LOW-TEMPERATURE DEPOSITION; SINGLE PHASE; SWITCHING CYCLES;

BISMUTH; DEPOSITION; FERROELECTRICITY; IRIDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLATINUM; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

VAPOR DEPOSITION;

EID: 79956029887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430267     Document Type: Article

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