Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)4Ti3O12 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 9 B, 2001, Pages 5576-5579

  Tokumitsu, Eisuke ^a   Isobe, Takeaki ^a   Kijima, Takeshi ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(Bi, La)4Ti3O12 (BLT); Ferroelectric memory; Ferroelectric gate transistor; Metal ferroelectric metal insulator semiconductor (MFMIS) structure

Indexed keywords

BISMUTH COMPOUNDS; DECOMPOSITION; FERROELECTRIC THIN FILMS; METAL INSULATOR BOUNDARIES; MISFET DEVICES; POLARIZATION; SEMICONDUCTOR METAL BOUNDARIES;

METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR (MFMIS) STRUCTURES; METALLORGANIC DECOMPOSITION (MOD);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035455265     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.5576     Document Type: Article

References (15)