Si-substituted ultrathin ferroelectric films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 6 B, 2002, Pages

  Kijima, Takeshi ^a   Ishiwara, Hiroshi ^b  

^a RandD Associations for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi2SiO5; Bi4 Ti3O12; Ferroelectric film; Pb(Zr,Ti)O3; Sol gel; SrBi2Ta2 O9

Indexed keywords

CRYSTALLIZATION; DIFFERENTIAL THERMAL ANALYSIS; FERROELECTRIC MATERIALS; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SOL-GELS; SOLID SOLUTIONS; SPIN COATING; STRONTIUM COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS;

BISMUTH SILICATE; BISMUTH TITANATE; ELECTRON PROBE MICROANALYSIS; FERROELECTRIC RANDOM ACCESS MEMORIES; LEAD ZIRCONIA TITANATE; STRONTIUM BISMUTH TANTALUM OXIDE;

FERROELECTRIC THIN FILMS;

EID: 0037098579     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l716     Document Type: Letter

References (10)