Effect of carrier gas of Bi4Ti3O12 thin film prepared by metalorganic vapor deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 5969-5972

  Nakamura, Makoto ^a   Higuchi, Tohru ^a   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12 (BIT); MOCVD; Postannealing; Thin film; Total gas flow rate

Indexed keywords

ANNEALING; ARGON; FERROELECTRICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PLATINUM; POLARIZATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; TITANIUM;

BISMUTH LAYER-STRUCTURED FERROELECTRICS; GAS FLOW RATE; POSTANNEALING;

THIN FILMS;

EID: 0345603682     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5969     Document Type: Article

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